to-92 features ? to-92 plastic- encapsulate transistors ? capable of 0.625watts(tamb=25 o c) of power dissipation. ? collector-cu rrent 0.5a ? collector- base voltage 40v ? operating and storage junction temperature range: -55 o c to +150 o c ? marking : s9012 electrical characteristics @ 25 o c unless otherwise specified symbol parameter min max units off characteristics v (br)cbo collector- base breakdown voltage (i c =100uadc, i e =0) 40 --- vdc v (br)ceo collector-emitter breakdown voltage (i c =0.1madc, i b =0) 25 --- vdc v (br)ebo emitter- base breakdown voltage (i e =100uadc, i c =0) 5.0 --- vdc i cbo collector cutoff current (v cb =40vdc, i e =0) --- 0.1 uadc i ceo collector cutoff current (v ce =20vdc, i b =0) --- 0.2 uadc i ebo emitter cutoff current (v eb =5.0vdc, i c =0) --- 0.1 uadc on characteristics h fe(1) dc current gain (i c =1madc, v ce =4.0vdc) 64 400 --- h fe(2) dc current gain (i c =500madc, v ce =1.0vdc) 40 --- --- v ce(sat) collector- emitter saturation voltage (i c =500madc, i b =50madc) --- 0.6 vdc v be(sat) base- emitter saturation voltage (i c =500madc, i b =50madc) --- 1.2 vdc v eb base- emitter voltage (i e =100madc) --- 1.4 vdc small-signal characteristics f t transistor frequency (i c =20madc, v ce =6.0vdc, f=30mhz) 150 --- mhz classification of h fe (1) rank g h i range 112 -166 144 -202 190 -300 e b c a e b c d g dimensions inches mm dim min max min max note a .170 .190 4.33 4.83 b .170 .190 4.30 4.83 c .550 .590 13.97 14.97 d .010 .020 0.36 0.56 e .130 .160 3.30 3.96 g .0 96 .104 2.44 2.64 s9012 -i s9012 -h s9012 -g lead free finish/rohs compliant ("p" suffix designates rohs compliant. see ordering information) epoxy meets ul 94 v-0 flammability rating moisure sensitivity level 1 product specification 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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